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| CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C907N3 Issued Date : 2003.07.31 Revised Date : Page No. : 1/4 BC847N3 Description * The BC847N3 is designed for general purpose switching and amplification applications. * Complementary to BC857N3. * Low current, IC(max)=100mA * Low voltage, BVCEO= 45V. Features Symbol BC847N3 Outline SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 50 45 6 100 200 225 150 -55~+150 Unit V V V mA mA mW C C BC847N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *VBE(on) 1 *VBE(on) 2 *hFE fT Cob Min. 50 45 6 580 110 100 Typ. 700 900 660 2.5 Max. 15 100 250 600 700 770 800 Unit V V V nA nA mV mV mV mV mV mV MHz pF Spec. No. : C907N3 Issued Date : 2003.07.31 Revised Date : Page No. : 2/4 Test Conditions IC=10A IC=1mA IE=10A VCE=30V VEB=5V IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IE=10mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Classification of hFE : Rank Range A 110--220 B 200--450 C 420--800 BC847N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE@VCE=6V Spec. No. : C907N3 Issued Date : 2003.07.31 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 Current Gain---HFE 100 10 0.1 1 10 100 1000 Collector Current --- IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Cutoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=12V 100 0.1 1 10 100 Collector Current --- IC(mA) 1000 0.1 1 10 Collector Current --- IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta( ) BC847N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C907N3 Issued Date : 2003.07.31 Revised Date : Page No. : 4/4 A L 3 B 1 2 S Marking: TE 8B V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector D H K J C *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BC847N3 CYStek Product Specification |
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